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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB52N90P
VDSS ID25
RDS(on) trr
= =
900V 52A 160m 300ns
PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 900 900 30 40 52 104 26 2 20 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W C C C C C N/lb. g Features Fast Intrinsic Diode Avalanche Rated Low Package Inductance
G = Gate S = Source D = Drain TAB = Drain
G D
(TAB)
S
Advantages Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125C
Characteristic Values Min. Typ. Max. 900 3.5 6.5 V V
Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor drives Robotics and Servo Controls
200 nA 50 A 4 mA 160 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100064A(02/09)
IXFB52N90P
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.13 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Gate Input Resistance Characteristic Values Min. Typ. Max. 20 35 1.56 19 1180 24 63 80 95 42 308 117 132 0.10 S nF pF pF ns ns ns ns nC nC nC C/W C/W PLUS264TM (IXFB) Outline
Source-Drain Diode TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 26A, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 52 208 1.5 300 1.8 26 A A V ns C A
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFB52N90P
Fig. 1. Output Characteristics @ 25C
55 50 45 40 VGS = 10V 9V 110 100 90 80 VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
35 30 25 20 15 10 7V 5 0 0 1 2 3 4 5 6 7 8 9 8V
70 60 50 40 30 20 10 0 0 5 10 15
9V
8V
7V
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
55 50 45 VGS = 10V 9V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
40
2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 52A I D = 26A
ID - Amperes
35 30 25 20 15 10 5 0 0 2 4 6 8 10 12
8V
7V
0.8 6V 0.6 0.4 14 16 18 20 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C 60 55 50 45 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90 TJ = 25C
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
ID - Amperes
40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFB52N90P
Fig. 7. Input Admittance
70 60 50 40 30 20 10 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 TJ = 125C 25C - 40C 70 TJ = - 40C 60 50
Fig. 8. Transconductance
g f s - Siemens
25C
ID - Amperes
40 125C 30 20 10 0 0 10 20 30 40 50 60 70 80
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
160 140 120 16 14 12 VDS = 450V I D = 26A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
100 80 60 40 20 0
10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
10,000
Ciss
1,000 Coss
Z(th)JC - C / W
30 35 40
0.100
0.010
100 Crss f = 1 MHz 10 0 5 10 15 20 25 0.001 0.0001 0.001 0.01 0.1 1 10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_52N90P(97)10-24-08

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